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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
6.5 0.2
FEATURES
1.6 0.2
5.0 0.2 4
1.5 -0.1
+0.2
2.3 0.2 0.5 0.1
RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A)
1
23
* Low Ciss Ciss = 840 pF TYP. * Built-in G-S Gate Protection Diodes * High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
1.3 MAX.
7.0 MIN. 5.5 0.2 13.7 MIN.
* Low On-Resistance
0.6 0.1 2.3 2.3
0.6 0.1
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
MP-3
1.5 -0.1
+0.2
0.75
6.5 0.2
5.0 0.2
2.3 0.2 0.5 0.1
0.8 4.3 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 20 10 40 20 1.0 150 10 10 V V A A W W C A mJ
12.0
1.3 MAX.
0.9 0.8 2.3 2.3 MAX. MAX. 0.8
MIN.
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
-55 to +150 C
Gate
Body Diode
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
Gate Protection Diode Source
The information in this document is subject to change without notice. Document No. D13193EJ2V0DS00 (2nd edition) (Previous No. TC-2495) Date Published March 1998 N CP(K) Printed in Japan
(c)
0.5
12
3
5.5 0.2 10.0 MAX.
4
1.0 MIN. 1.5 TYP.
1994
2SK2414, 2SK2414-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 860 440 110 15 90 75 35 24 2.6 6.0 1.0 85 220 1.0 7.0 MIN. TYP. 52 68 1.6 12 10 10 MAX. 70 95 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 5.0 A VGS = 4 V, ID = 5.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 5.0 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 10 A VDD = 48 V VGS = 10 V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 di/dt = 50 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 V 0 IAS ID VDD BVDSS VDS 50
Test Circuit 2 Switching Time
D.U.T. PG. RG RG = 10
L
VDD VGS 0 t
VGS RL VGS 90 % VGS (on) Wave 010 % Form VDD 90 % ID ID Wave Form
10 % 0 td (on) ton tr
90 % 10 %
ID
td (off) toff tf
t = 1 s Duty Cycle 1 % Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50 VDD
RL
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2414, 2SK2414-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - % PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 24 20 16 12 8 4 0
80
60
40
20
0
20
40
60
80
100 120 140
160
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
PW =
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Pulsed
ID - Drain Current - A
ID (pulse)
ID - Drain Current - A
40
VGS = 10 V VGS = 6 V
10
s
10
RD S t V (on) L G S = imit 10 ed V)
0
s
30 VGS = 4 V 20
10
ID (DC)
rD
Po we
(a
1
iss ipa tio n Lim
10
s m ms 10
10
s m 0 DC d ite
Tc = 25 C Single Pulse 1 0.1 1
10
100
0
2
4
6
8
10
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
ID - Drain Current - A
100
10
TA = -25 C 25 C 125 C
1
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
3
2SK2414, 2SK2414-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W Rth (ch-a) = 125 C/W 100
10 Rth (ch-c) = 6.25 C/W 1
0.1
0.01 10
100
1m
10 m
100 m
1
10
Single Pulse 100 1000
PW - Pulse Width - s
|yfs| - Forward Transfer Admittance - S
100
VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C
RDS (on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 Pulsed ID = 5 A 100 80 60 40 20
10
ID = 5 A
1
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS (on) - Drain to Source On-State Resistance - m
120 100 80 60 40 20 0
VGS (off) - Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA
1.5
VGS = 4 V VGS = 10 V
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
1
10 ID - Drain Current - A
100
Tch - Channel Temperature - C
4
2SK2414, 2SK2414-Z
RDS (on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 120 100 80 60 40 20 ID = 5 A 0 -50 0.1 -25 0 25 50 75 100 125 150 0 VGS = 4 V
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
VGS = 10 V 10
VGS = 10 V
VGS = 0 1
1.0
Pulsed 2.0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF td (on), tr, td (off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1000
VGS = 0 f = 1 MHz
1000
Ciss Coss
100
td (off)
tr
tf td (on) 10 VDD = 30 V VGS = 10 V RG = 10 100
100
Crss
10 1 10 VDS - Drain to Source Voltage - V 100
1.0 0.1 1.0 10 ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 100
VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 10 A 16 VDD = 48 V 14 12 10 VDS 40 VGS 8 6 20 4 2 0 0 10 20 30 40
60
50
10 0.1
1.0
di/dt = 50 A/ s VGS = 0 10 100
ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
5
2SK2414, 2SK2414-Z
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 V 0 IAS 10 A
IAS - Single Avalanche Energy - mJ
dt - Energy Derating Factor - %
80
10
IAS = 10 A
EAS =1 0m
60
J
40
1.0 VDD = 30 V VGS = 20 V 0 RG = 25 W 10 100
20 0 25
1m
10 m
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
2SK2414, 2SK2414-Z
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. IC package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. C11745E C11531E C10535E C10943X MEI-1202 X10679E D12971E D12972E D13085E
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2414, 2SK2414-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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